Перегляд за автором "Smirnov, A.B."

Результати 1-5 з 5

Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence

Savkina, R.K.; Smirnov, A.B.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

We have carried out a systematic study of mercury cadmium telluride crystals subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier transport parameters were determined from the Hall ...
Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication

Savkina, R.K.; Sizov, F.F.; Smirnov, A.B.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)

Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined ...
Narrow-gap piezoelectric heterostructure as IR detector

Sizov, F.F.; Smirnov, A.B.; Savkina, R.K.; Deriglazov, V.A.; Yakushev, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)

Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The ...
Optically induced change of photoelectric properties of CdMnTe crystals

Savkina, R.K.; Sizov, F.F.; Smirnov, A.B. (Functional Materials, 2005)

To study the optically induced transformation of the point defect system under strong ans weak excitation from the intrinsic absorption hv > Eg, photoelectric and electric properties of semiconductor solid solutions С₁-хМnхТе ...
Plasma treatment of Cd₁₋ₓZnₓTe (x ~ 0.04) single crystals

Smirnov, A.B. (Functional Materials, 2011)

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Перегляд за автором "Smirnov, A.B."

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Перегляд за автором "Smirnov, A.B."

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